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Type Designator: BF338
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: –
Package: TO39
| وزن | 2 گرم |
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