ترانزیستور 2SD838K

Type Designator: 2SD838
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 2500 V
Maximum Collector-Emitter Voltage |Vce|: 900 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 3
Noise Figure, dB: –
Package: TO3