ترانزیستور 2SD819

Type Designator: 2SD819
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1 MHz
Collector Capacitance (Cc): 95 pF
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: –
Package: TO3