ترانزیستور 2SD350

Type Designator: 2SD350
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 22 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 700 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 11 A
Max. Operating Junction Temperature (Tj): 125 °C
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 3
Noise Figure, dB: –
Package: TO3