ترانزیستور 2SC1470

Type Designator: 2SC1470
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 450 V
Maximum Collector-Emitter Voltage |Vce|: 360 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 5 MHz
Collector Capacitance (Cc): 1400 pF
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: –