ترانزیستور 2SC1162

Type Designator: 2SC1162
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 180 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: –
Package: TO126