توضیحات
ترانزیستور BD115
Type Designator: BD115
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 6 W
Maximum Collector-Base Voltage |Vcb|: 245 V
Maximum Collector-Emitter Voltage |Vce|: 180 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 22
Noise Figure, dB: –
Package: TO39
