Silicon N-Channel Power F-MOS FET
Type Designator: 2SK2129
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 50 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 3 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 60 nS
Drain-Source Capacitance (Cd): 90 pF
Maximum Drain-Source On-State Resistance (Rds): 4 Ohm
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4,800 تومان
پل دیود گرد 2 آمپر 2W10
BRIDGE DIODE 2A 1000V