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Type Designator: IRF1404

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 162 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 160 nC

Drain-Source Capacitance (Cd): 7360 pF

Maximum Drain-Source On-State Resistance (Rds): 0.004 Ohm

Package: TO220AB

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