Type Designator: SUM45N25-58
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 375 W
Maximum Drain-Source Voltage |Vds|: 250 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 45 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 95 nC
Rise Time (tr): 220 nS
Drain-Source Capacitance (Cd): 300 pF
Maximum Drain-Source On-State Resistance (Rds): 0.058 Ohm
Package: TO-263