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Type Designator: SUM45N25-58

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 375 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 45 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 95 nC

Rise Time (tr): 220 nS

Drain-Source Capacitance (Cd): 300 pF

Maximum Drain-Source On-State Resistance (Rds): 0.058 Ohm

Package: TO-263

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