BF259

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Type Designator: BF259

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 300 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 90 MHz

Collector Capacitance (Cc): 7 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO39

 
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