2SD200

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Type Designator: 2SD200

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 10

Maximum collector-base voltage |Ucb|, V: 1500

Maximum collector-emitter voltage |Uce|, V: 700

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 2.5

Maksimalna temperatura (Tj), °C: 125

Transition frequency (ft), MHz: 4

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 2

Noise Figure, dB: -

Package of 2SD200 transistor: TO3

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