2SB337

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Type Designator: 2SB337

Material of Transistor: Ge

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 12 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 1 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 90 °C

Transition Frequency (ft): 0.125 MHz

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO3

 
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