Type Designator: AP9997GH-HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 34.7 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 11 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 17 nS
Drain-Source Capacitance (Cd): 65 pF
Maximum Drain-Source On-State Resistance (Rds): 0.12 Ohm
Package: TO-252
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