BUX85F

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Type Designator: BUX85F

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 1000 V

Maximum Collector-Emitter Voltage |Vce|: 450 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 5 MHz

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

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